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IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features * Revolutionary semiconductor material - Silicon Carbide * Switching behavior benchmark * No reverse recovery/ No forward recovery * No temperature influence on the switching behavior * High surge current capability * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Breakdown voltage tested at 5mA2) PG-TO220-2-2 Product Summary V DC Qc IF 600 19 8 V nC A
thinQ! 2G Diode specially designed for fast switching applications like: * CCM PFC * Motor Drives Type IDT08S60C Package PG-TO220-2-2 Marking D08S60C Pin 1 C Pin 2 A
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 C f =50 Hz T C=25 C, t p=10 ms T j=150 C, T C=100 C, D =0.1 T C=25 C, t p=10 s T C=25 C, t p=10 ms Value 8 12 59 32 264 17 600 VR=0...480V T C=25 C 50 75 -55 ... 175 M3 and M3.5 screws page 1 60 A2s V V/ns W C Ncm 2006-03-14 Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 I F,RM I F,max i 2dt V RRM dv/ dt P tot T j, T stg
IDT08S60C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6mm ( 0.063in.) from case for 10s 2 62 K/W Values typ. max. Unit
T
sold
-
-
260
C
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.1 mA I F=8 A, T j=25 C I F=8 A, T j=150 C Reverse current IR V R=600 V, T j=25 C 600 1.5 1.7 1 1.7 2.1 100 A V
V R=600 V, T j=150 C
-
4
1000
AC characteristics Total capacitive charge Switching time3) Total capacitance Qc tc C V R=400 V,I FI F,max, di F/dt =200 A/s, T j=150 C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 19 310 50 50 <10 nC ns pF
1) 2) 3)
J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5 mA.
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
4)
Only capacitive charge occuring, guaranteed by design
Rev. 2.0
page 2
2006-03-14
IDT08S60C
1 Power dissipation P tot=f(T C) parameter: RthJC(max)
80
2 Diode forward current I F=f(T C); T j175 C parameter: R thJC(max); V F(max)
20
70 16 60
50
12
P tot [W]
40
I F [A]
8 4 0 25 50 75 100 125 150 175 200 25 50 75 100 125 150 175 200
30
20
10
0
T C [C]
T C [C]
3 Typ. forward characteristic I F=f(V F); t p=400 s parameter: T j
20
-55 C
4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 s; parameter: T j
80
25 C
100 C
15
150 C
60
-55 C
25 C
I F [A]
I F [A]
10
175 C
40
100 C
5
20
150 C 175 C
0 0 1 2 3 4
0 0 2 4 6 8
V F[V]
V F [V]
Rev. 2.0
page 3
2006-03-14
IDT08S60C
5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 C, parameter: D =t p/T
40
0.1 0.2 0.5 1
6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j
101
30
100
P F(AV) [W]
I R [A]
20
10-1
175 C
-55 C
10
10
-2
150 C
100 C
25 C
0 0 5 10 15
10-3 100
200
300
400
500
600
I F(AV) [A]
V R [V]
7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 C, f =1 MHz
400
350
0.5
100
0.2 0.1
300
250
Z thJC [K/W]
10-1
0.02
C [pF]
10-4 10-3 10-2 10-1
0.05
200
150 10-2
single pulse
100
50 10-3 10-5
0 10-1 100 101 102 103
t [s]
V R [V]
Rev. 2.0
page 4
2006-03-14
IDT08S60C
9 Typ. C stored energy E C=f(V R) 10 Typ. capacitance charge vs. current slope Q C=f(di F/dt )4); T j=150 C; I FI F,max
10
20
8 15
6
Q c [nC]
4 2 0 0 100 200 300 400 500 600
E c [J]
10
5
0 100 400 700 1000
V R [V]
di F/dt [A/s]
Rev. 2.0
page 5
2006-03-14
IDT08S60C
Package Outline: PG-TO220-2-2
Rev. 2.0
page 6
2006-03-14
IDT08S60C
Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved.
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 7
2006-03-14

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